Analytical View of Garbage Collection in Solid State Media File Systems

Analytical View of Garbage Collection in Solid State Media File Systems

Nilay Khandelwal and Veni Taneja

(Thesis written under the course Operating Systems)

Department of Computer Science & Engineering

Jaypee Institute of Information Technology, India

nilay.khandelwal@gmail.com, venitaneja@gmail.com

1.0 Overview

Solid State media’s such as flash memory are non-volatile computer memory that can be electrically erased and reprogrammed. These are specific types of EEPROM’s that are erased and programmed in large blocks.

Flash memory is non-volatile, which means that it does not need power to maintain the information stored in the chip. In addition, flash memory offers fast read access times and better kinetic shock resistance than hard disks (Table 1).

Though flash memory has many advantages, its special hardware characteristics impose design challenges on storage systems.

Media Access Time

Read (512B) Write (512B) Erase

DRAM 2.56µs 2.56µs -

NOR Flash 14.4µs 3.53ms 1.2s (128kB)

NAND Flash 135.9µs 226µs 2-3ms (16kB)

Disk 12.4ms 12.4ms -

Table 1. Characteristics of different storage media. (NOR Flash: Intel 28F128JF3A-150, NAND Flash: K9F5608U0M)

1.1 Architecture

1.1.1 Partitions

Flash memory is divided into one or many sections of memory called partitions. A multi-partition architecture allows system processor to multi-task the I/O operations with the flash memory. While the processor can read from one partition, it can write/erase in another.

Figure 1. Partitions, Blocks and Pages

1.1.2 Blocks

In addition to partitions, flash memory is further divided into sections of memory called blocks (Figure 1). Flash memory devices in which all blocks are of the same size are symmetrically-blocked, while devices which are asymmetrically-blocked generally have several blocks that are significantly smaller than main array of flash blocks. Small blocks are typically used for storing small data or boot code. Block sizes vary 64kB to 256kB.

1.1.3 Pages

Each block in flash memory comprises of fixed number of pages (Figure 1). A page is typically of size 512B to 2kB. While erase operations can be done only on blocks, I/O operations can be done on every page.

1.2 Programming Data

Flash devices allow programming values from logical “1” to “0”, but not from “0” to “1” (Figure 2). To program values back to “1”s requires erasing a full block. In most cases when data is data edited, it can either be re-written to the same block by caching the original, erasing the block and re-writing over it, or by writing the edited file to a new location in flash and the old one invalidated. Eventually, invalid data needs to be reclaimed which is usually done as a background process.

1 1 1 1 1 1 1 1 1 1

1 0 1 0 0 1 1 0 1 0

1 1 1 1 1 1 1 1 1 1

Figure 2. Flash Programming Limitations

2.0 Flash File System Functions

While flash file systems have many functions in common with file systems for other media, there are many that are unique to file systems for flash devices.

2.1 Wear Leveling

Each block in a flash memory device has a finite number of erase-write cycles (~ 10,000 to 100,000). To increase the life of the flash device, writes and erases should be spread as evenly as possible over all the blocks of the device. This is called wear leveling. Care needs to be taken in the software to balance performance with evenly spread wear leveling of blocks.

2.2 Garbage Collection

As mentioned previously, edits to files are usually not done “in place”, rather data is written to a new location and the old data is invalidated. Since blocks should be erased in advance before updating, updates in place are not efficient.

The invalid data needs to be cleaned up at